A comparison between normally and highly accelerated electromigration tests

被引：13

作者：

Foley, S

Scorzoni, A

Balboni, R

Impronta, M

De Munari, I

Mathewson, A

Fantini, F

机构：

[1] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland

[2] CNR, Ist Lamel, I-40129 Bologna, Italy

[3] Univ Parma, Ctr MTI, I-43100 Parma, Italy

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 6-8期

关键词：

D O I：

10.1016/S0026-2714(98)00121-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally and highly accelerated electromigration tests on Al-Cu lines of different widths are compared. It is shown that the use of the Black equation gives different extrapolated results depending on the range of stress conditions considered. It is concluded that for extrapolations it is safe to use the Black equation only in the case of normally accelerated stress conditions (temperatures in the range 158-240 degrees C and current densities between 1 and 2 MA/cm(2)) and when the extracted value for the current density acceleration factor is 2. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1021 / 1027

页数：7

共 8 条

[1]

*ASTM, F126089 ASTM

[2]

GIROUX F, 1995, P IEEE INT C MICR TE, P229

[3] A NEW WAFER-LEVEL ISOTHERMAL JOULE-HEATED ELECTROMIGRATION TEST FOR RAPID TESTING OF INTEGRATED-CIRCUIT INTERCONNECT [J].