Magnetostatic effects in giant magnetoresistive spin-valve

被引:33
作者
Cross, RW [1 ]
Kim, YK [1 ]
Oti, JO [1 ]
Russek, SE [1 ]
机构
[1] NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
关键词
D O I
10.1063/1.117575
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on magnetotransport measurements of spin valve films that have been fabricated into rectangular stripes with Au current leads. The spin valve films consisted of two magnetic NiFe layers separated by a nonmagnetic Cu layer. The top NiFe layer was magnetically pinned by a FeMn layer with an effective pinning field of 12 kA/m (150 Oe). After device fabrication, the transport properties changed dramatically as the stripe-height of the device was decreased below 1 mu m. Internal demagnetizing fields and magnetostatic interactions between the magnetic layers dominated the magnetic response. These interactions change the biasing point and the linearity, and cause a decrease in sensitivity to field changes. We have developed a simple single-domain rotation model that includes magnetostatic, anisotropy, and exchange interactions to describe the magnetic behavior, from which we calculate the transport response. (C) 1996 American Institute of Physics.
引用
收藏
页码:3935 / 3937
页数:3
相关论文
共 6 条
  • [1] MAGNETORESISTANCE OF THIN-FILM NIFE DEVICES EXHIBITING SINGLE-DOMAIN BEHAVIOR
    CROSS, RW
    OTI, JO
    RUSSEK, SE
    SILVA, T
    KIM, YK
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1995, 31 (06) : 3358 - 3360
  • [2] SIZE AND SELF-FIELD EFFECTS IN GIANT MAGNETORESISTIVE THIN-FILM DEVICES
    CROSS, RW
    RUSSEK, SE
    SANDERS, SC
    PARKER, MR
    BARNARD, JA
    HOSSAIN, SA
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1994, 30 (06) : 3825 - 3827
  • [3] DESIGN AND OPERATION OF SPIN-VALVE SENSORS
    HEIM, DE
    FONTANA, RE
    TSANG, C
    SPERIOSU, VS
    GURNEY, BA
    WILLIAMS, ML
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1994, 30 (02) : 316 - 321
  • [4] SINGLE-DOMAIN MAGNETIZATION CURVES FOR GENERAL ELLIPSOID
    JOHNSON, CE
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2515 - &
  • [5] Middelhoek S., 1961, FERROMAGNETIC DOMAIN
  • [6] Simulating device size effects on magnetization pinning mechanisms in spin valves
    Oti, JO
    Cross, RW
    Russek, SE
    Kim, YK
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 6386 - 6388