SIZE AND SELF-FIELD EFFECTS IN GIANT MAGNETORESISTIVE THIN-FILM DEVICES

被引:22
作者
CROSS, RW [1 ]
RUSSEK, SE [1 ]
SANDERS, SC [1 ]
PARKER, MR [1 ]
BARNARD, JA [1 ]
HOSSAIN, SA [1 ]
机构
[1] UNIV ALABAMA,CTR MAT INFORMAT TECHNOL,TUSCALOOSA,AL 35487
关键词
D O I
10.1109/20.333915
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Giant magnetoresistance (GMR) was measured as a function of device size for patterned NiCoFe/Cu and NiFe/Ag films. For the quasi-granular NiCoFe/Cu films, the normalized maximum change in resistivity Delta rho/rho was 8% for most of the samples. For the NiFe/Ag films, antiparallel alignment was achieved through magnetostatic coupling, not exchange fields, with a Delta rho/rho of 4.5%. The films were patterned into stripes with Au current leads for size-effect measurements. The height of the stripes varied from 0.5 to 16 mu m and the track width varied from 1 to 16 mu m. Discrete switching events and anomalous low-field dips in the response were observed for both materials for small device sizes. Self-field and heating effects due to the applied current were investigated for the NiFeCo/Cu films. The effect of the self-field produced by the applied current was separated from the thermal contribution and was found to reduce the response by over 32% for a current density of 10(7) A/cm(2).
引用
收藏
页码:3825 / 3827
页数:3
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