Reliability of contacts for press-pack high-power devices

被引：5

作者：

Vobecky, J ^{[1
]}

Kolesnikov, D ^{[1
]}

机构：

[1] Czech Tech Univ, Dept Microelect, Prague 16627 6, Czech Republic

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2005.07.076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of high-power silicon diodes with different anode contact material (Al, PtSiCu, PtSiCuAu) was tested in the conditions of free-floating silicon in pressed package. Pressure, thermal and cycling tests were applied without foils to buffer excessive loading. Thin PtSi layer was found too brittle for usage in so hard conditions. Copper stacks with thin PtSi interlayer provide low voltage drop and show potential to survive such hard stress conditions under thermnal and power load cycle. 5 mu m thick PtSiCu contacts showed the best thermo-mechanical properties. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1676 / 1681

页数：6

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