Advanced local lifetime control for higher reliability of power devices

被引：5

作者：

Vobecky, J ^{[1
]}

Hazdra, P ^{[1
]}

机构：

[1] Czech Tech Univ, Fac Elect Engn, Dept Microelect, Prague 16627 6, Czech Republic

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(03)00320-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The decoration of radiation defects resulting from 10 MeV He irradiation by Pt diffusing from PtSi anode contact is used to locally decrease the carrier lifetime in 2.5 kV/100A diode. Comparison with He irradiated diodes with Al contacts shows lower leakage current and forward voltage drop in the PtSi diodes. The maximal reduction of the stored charge in the PtSi devices (up to 40% of the untreated device) is limited by the solid solubility of Pt-s((-/0)) and the lower capture cross-section of Pt acceptor and corresponds to devices irradiated by He at dose 3 x 10(10) cm(-2). (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1883 / 1888

页数：6

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