Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition

We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes. (C) 1998 American Institute of Physics. [S0003-6951(98)03625-0].