Analysis of junction leakage in advanced germanium p plus /n junctions

被引：17

作者：

Eneman, G. ^{[1
]}

Casain, O. Sicart i ^{[1
]}

Simoen, E. ^{[1
]}

Brunco, D. P. ^{[2
]}

De Jaeger, B. ^{[1
]}

Satta, A. ^{[1
]}

Nicholas, G. ^{[3
]}

Claeys, C. ^{[1
,4
]}

Meuris, M. ^{[1
]}

Heyns, M. M. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, Louvain, Belgium

[2] IMEC, Leuven, Belgium

[3] Sharp Lab, Oxford, England

[4] Katholieke Univ Leuven, ESAT INSYS, Leuven, Belgium

来源：

ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2007年

关键词：

D O I：

10.1109/ESSDERC.2007.4430976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analysed heavily doped p+/n junctions in germanium, and found that the halos in this work provide a trade-off between transistor channel control and junction leakage. Temperature-dependent leakage measurements show that either trap-assisted tunneling (TAT) or band-to-band-tunneling (BTBT) are the dominant leakage mechanisms for junctions with halos, (junction doping above similar to 10(18) cm(-3)). Further, perimeter leakage data at/near room temperature for these junctions are consistent with the Hurckx model for TAT. At lower doping levels (no Halo), leakages are significantly lower and correspond to a ShockleyRead-Hall (SRH) mechanism at/near room temperature and a standard diffusion current mechanism for temperatures above similar to 75 degrees C.

引用

页码：454 / +

页数：2

共 7 条

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[3]

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