Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor -: art. no. 227203

被引:50
作者
Csontos, M [1 ]
Wojtowicz, T
Liu, X
Dobrowolska, M
Jankó, B
Furdyna, JK
Mihály, G
机构
[1] Tech Univ Budapest, Dept Phys, H-1111 Budapest, Hungary
[2] Hungarian Acad Sci, Electron Transport Solids Res Grp, H-1111 Budapest, Hungary
[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
关键词
D O I
10.1103/PhysRevLett.95.227203
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn2+ ions located outside the ferromagnetically ordered regions when the system is below T-c. A model is proposed, based on the p-d exchange between spin-polarized charge carriers and localized Mn2+ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.
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页数:4
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