Optimization of the UTC-PD epitaxy for photomixing at 340 GHz

被引：12

作者：

Banik, Biddut ^{[1
]}

Vukusic, Josip ^{[1
]}

Hjelmgren, Hans ^{[1
]}

Stake, Jan ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 2008年 / 29卷 / 10期

关键词：

submillimeter wave generation; photomixers; semiconductor device modeling; terahertz sources; uni-traveling-carrier photodiodes;

D O I：

10.1007/s10762-008-9396-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a method to optimize the epitaxial layer structure of an InGaAs/InP uni-traveling-carrier photo-diode (UTC-PD) for continuous THz-wave generation. The design approach used is general in that it can be applied for any target frequency while this study focuses on 340 GHz. The photodiode epitaxy is modeled and optimized using a TCAD software implementing the hydrodynamic semiconductor equations. This physical device model was found to be in good agreement with reported experimental results. It is shown that the UTC-PD can generate similar to 1 mW at 340 GHz by choosing the optimum absorption layer and collection layer thicknesses.

引用

页码：914 / 923

页数：10

共 19 条

[1]

[Anonymous], SENTAURUS TCAD SOFTW

[2] Analysis of limitations of tetrahertz p-i-n uni-traveling-carrier photodiodes [J].

Feiginov, Michael N. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)

[3]

Ishibashi T, 2000, IEICE T ELECTRON, VE83C, P938

[4]

Ishibashi T., 1997, ULTRAFAST ELECT OPTO, V13, P83

[5] High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes [J].

Ito, H ;

Kodama, S ;

Muramoto, Y ;

Furuta, T ;

Nagatsuma, T ;

Ishibashi, T .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2004, 10 (04) :709-727

[6] InP/InGaAs uni-travelling-carrier photodiode with 220GHz bandwidth [J].

Ito, H ;

Furuta, T ;

Kodama, S ;

Watanabe, N ;

Ishibashi, T .

ELECTRONICS LETTERS, 1999, 35 (18) :1556-1557

[7] High-power photonic millimetre wave generation at 100GHz using matching-circuit-integrated uni-travelling-carrier photodiodes [J].

Ito, H ;

Nagatsuma, T ;

Hirata, A ;

Minotani, T ;

Sasaki, A ;

Hirota, Y ;

Ishibashi, T .

IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (02) :138-142

[8] Photonic millimetre-wave emission at 300 GHz using an antenna-integrated uni-travelling-carrier photodiode [J].

Ito, H ;

Furuta, T ;

Hirota, Y ;

Ishibashi, T ;

Hirata, A ;

Nagatsuma, T ;

Matsuo, H ;

Noguchi, T ;

Ishiguro, M .

ELECTRONICS LETTERS, 2002, 38 (17) :989-990

[9] UTC-PD-based optoelectronic components for high-frequency and high-speed applications [J].

Kodama, Satoshi ;

Ito, Hiroshi .

IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (02) :429-435

[10] Optical Far-IR wave generation -: State-of-the-art and advanced device structures [J].

Krozer, V ;

Leone, B ;

Roskos, H ;

Löffler, T ;

Loata, G ;

Döhler, G ;

Renner, F ;

Eckardt, S ;

Malzer, S ;

Schwanhausser, A ;

Klaassen, TO ;

Adam, A ;

Lugli, P ;

Di Carlo, A ;

Manenti, M ;

Scamarcio, G ;

Vitiello, MS ;

Feiginov, M .

MICROWAVE AND TERAHERTZ PHOTONICS, 2004, 5466 :178-192

← 1 2 →