InP/InGaAs uni-travelling-carrier photodiode with 220GHz bandwidth

被引：43

作者：

Ito, H ^{[1
]}

Furuta, T ^{[1
]}

Kodama, S ^{[1
]}

Watanabe, N ^{[1
]}

Ishibashi, T ^{[1
]}

机构：

[1] NTT, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 18期

关键词：

D O I：

10.1049/el:19991043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InP/InGaAs uni-travelling-carrier photodiode with a record 3dB bandwidth of 220GHz at a wavelength of 1.55 mu m has been fabricated. The estimated average electron velocity in the depletion region is > 2.3 x 10(7) cm/s, which indicates that nonequilibrium electron transport is taking place in the collection layer.

引用

页码：1556 / 1557

页数：2

共 6 条

[1] TRAVELING-WAVE PHOTODETECTORS WITH 172-GHZ BANDWIDTH AND 76-GHZ BANDWIDTH-EFFICIENCY PRODUCT [J].