InP 2D photonic crystal microlasers on silicon wafer:: room temperature operation at 1.55 μm

被引：79

作者：

Monat, C

Seassal, C

Letartre, X

Viktorovitch, P

Regreny, P

Gendry, M

Rojo-Romeo, P

Hollinger, G

Jalaguier, E

Pocas, S

Aspar, B

机构：

[1] Ecole Cent Lyon, UMR CNRS 5512, Lab Elect Optoelect & Microsyst, F-69131 Ecully, France

[2] CEA, LETI, Dept Technol Silicium, F-38054 Grenoble 9, France

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 12期

关键词：

D O I：

10.1049/el:20010543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature pulsed laser operation of 2D photonic crystal microcavities around 1.55 mum is reported. Such devices are based on thin III/V heterostructures transferred onto silicon and include an InGaAs/InP multiquantum well (MQW) active layer.

引用

页码：764 / 766

页数：3

共 8 条

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