InP microdisk lasers on silicon wafer:: CW room temperature operation at 1.6μm

被引：41

作者：

Seassal, C

Rojo-Romeo, P

Letartre, X

Viktorovitch, P

Hollinger, G

Jalaguier, E

Pocas, S

Aspar, B

机构：

[1] Ecole Cent Lyon, Lab Elect Optoelect & Microsyst, UMR CNRS 5512, F-69131 Ecully, France

[2] CEA Grenoble, LETI, Dept Microtechnol, F-38054 Grenoble 9, France

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 04期

关键词：

D O I：

10.1049/el:20010173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microdisk lasers are fabricated in an InP/InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 mum is reported.

引用

页码：222 / 223

页数：2

共 5 条

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