Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40μA

被引：150

作者：

Fujita, M ^{[1
]}

Ushigome, R ^{[1
]}

Baba, T ^{[1
]}

机构：

[1] Yokohama Natl Univ, Div Elect & Comp Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 09期

关键词：

D O I：

10.1049/el:20000609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A threshold current of 40 mu A, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-cladding by Cl-2/Xe inductively coupled plasma etching.

引用

页码：790 / 791

页数：2

共 5 条

[1] Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 mu m [J].