LOW-THRESHOLD-CURRENT-DENSITY 1.5-MU-M LASERS USING COMPRESSIVELY STRAINED INGAASP QUANTUM-WELLS

被引：45

作者：

OSINSKI, JS

ZOU, Y

GRODZINSKI, P

MATHUR, A

DAPKUS, PD

机构：

[1] National Center for Integrated Photonic Technolortgy, Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 01期

关键词：

D O I：

10.1109/68.124858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-threshold-current-density (J(th)) of 140 A/cm2 for broad-area 1.5-mu-m semiconductor lasers with uncoated facets is demonstrated at a cavity length of 3.5 mm. This was achieved by the use of a single InGaAsP quantum well (QW) of 1.8% compressive strain inside a step-graded InGaAsP waveguide region. Low-cavity losses of 3.5 cm-1 and a relatively wide quantum well as compared to InGaAs wells of equivalent strain contribute to this high performance. Double QW devices of 2 mm length showed threshold current densities of 241 A/cm2. Quaternary single and double QW's of similar width but only 0.9% strain gave slightly higher threshold current density values, but allowed growth of a 4 QW structure with a J(th) of 324 A/cm2 at L = 1.5 mm.

引用

页码：10 / 13

页数：4

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