INGAAS INP QUANTUM-WELL LASERS WITH SUB-MA THRESHOLD CURRENT

被引：62

作者：

TEMKIN, H

DUTTA, NK

TANBUNEK, T

LOGAN, RA

SERGENT, AM

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 16期

关键词：

D O I：

10.1063/1.104085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We evaluate the effect of high-reflectivity facet coatings on the threshold current of lattice matched and compressively strained InGaAs/InP quantum well lasers. A large decrease in the threshold current is observed in structures with low internal losses. Coated lasers exhibit threshold currents as low as 1.1 mA at 20 °C and 0.9 mA at 10 °C, down from ∼15 mA in as-cleaved devices with cavity length of 200 μm. These changes are carefully modeled and the prospects for further reduction of the threshold current discussed.

引用

页码：1610 / 1612

页数：3

共 17 条

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