REPRODUCIBLE GROWTH OF LOW-THRESHOLD SINGLE AND MULTIPLE QUANTUM WELL INGAAS/INP LASERS BY A NOVEL INTERLAYER GROWTH TECHNIQUE

被引:19
作者
TANBUNEK, T
TEMKIN, H
CHU, SNG
LOGAN, RA
机构
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D O I
10.1063/1.101769
中图分类号
O59 [应用物理学];
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页码:819 / 821
页数:3
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共 15 条
[1]   1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205
[2]  
CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[3]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[4]   GRADED BARRIER SINGLE QUANTUM WELL LASERS - THEORY AND EXPERIMENT [J].
KASEMSET, D ;
HONG, CS ;
PATEL, NB ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1025-1030
[5]  
KOREN U, 1988, 11TH C DIG IEEE INT, P6
[6]  
KOREN U, 1987, APPL PHYS LETT, V51, P1745
[7]   HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
MILLER, BI ;
SCHUBERT, EF ;
KOREN, U ;
OURMAZD, A ;
DAYEM, AH ;
CAPIK, RJ .
APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386
[8]   GAINASP-INP SINGLE QUANTUM-WELL LASERS BY OMVPE [J].
MIYAMOTO, Y ;
CAO, M ;
FURUYA, K ;
SUEMATSU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (03) :L176-L178
[9]   THRESHOLD CURRENT OF SINGLE QUANTUM-WELL LASERS - THE ROLE OF THE CONFINING LAYERS [J].
NAGLE, J ;
HERSEE, S ;
KRAKOWSKI, M ;
WEIL, T ;
WEISBUCH, C .
APPLIED PHYSICS LETTERS, 1986, 49 (20) :1325-1327
[10]   DOUBLE HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASERS AT 1.5-1.7 MU-M GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].
NELSON, AW ;
MOSS, RH ;
REGNAULT, JC ;
SPURDENS, PC ;
WONG, S .
ELECTRONICS LETTERS, 1985, 21 (08) :329-331