HIGH-FREQUENCY BURIED HETEROSTRUCTURE 1.5 MU-MN GAINASP-INP LASERS, GROWN ENTIRELY BY METALORGANIC VAPOR-PHASE EPITAXY IN 2 EPITAXIAL-GROWTH STEPS

被引：29

作者：

TANBUNEK, T

LOGAN, RA

VANDERZIEL, JP

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 24期

关键词：

D O I：

10.1049/el:19881012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1483 / 1484

页数：2

相关论文

共 6 条

[1] VERY LOW-THRESHOLD 1.53-MUM DFB LASERS BY VPE TRANSPORT [J].

BROBERG, B ;

NILSSON, S ;

TANBUNEK, T .

ELECTRONICS LETTERS, 1987, 23 (12) :624-625

[2] HIGH-PERFORMANCE, HIGH-RELIABILITY BURIED HETEROSTRUCTURE LASERS BY MOVPE [J].

COOPER, DM ;

COLE, S ;

DEVLIN, WJ ;

HOBBS, RE ;

NELSON, AW ;

REGNAULT, JC ;

SKEATS, AP ;

SIM, SP ;

SPURDENS, PC .

ELECTRONICS LETTERS, 1988, 24 (09) :519-521

[3] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J].

LIAU, ZL ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :568-570

[4] INGAASP/INP HIGH-POWER SEMIINSULATING BLOCKED PLANAR BURIED-HETEROSTRUCTURE LASERS GROWN ENTIRELY BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MILLER, BI ;

KOREN, U ;

CAPIK, RJ ;

SU, YK .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2260-2262

[5] PLANAR-EMBEDDED INGAASP/INP HETEROSTRUCTURE LASER WITH A SEMIINSULATING INP CURRENT-BLOCKING LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SANADA, T ;

NAKAI, K ;

WAKAO, K ;

KUNO, M ;

YAMAKOSHI, S .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1054-1056

[6] LOW THRESHOLD OPERATION OF 1.55-MU-M GAINASP-INP DFB-BH LDS ENTIRELY GROWN BY MOVPE ON INP GRATINGS [J].

YAMADA, H ;

SASAKI, T ;

TAKANO, S ;

NUMAI, T ;

KITAMURA, M ;

MITO, I .

ELECTRONICS LETTERS, 1988, 24 (03) :147-149