INGAASP/INP HIGH-POWER SEMIINSULATING BLOCKED PLANAR BURIED-HETEROSTRUCTURE LASERS GROWN ENTIRELY BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：5

作者：

MILLER, BI ^{[1
]}

KOREN, U ^{[1
]}

CAPIK, RJ ^{[1
]}

SU, YK ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2260 / 2262

页数：3

共 13 条

[1] HIGH-SPEED ANALOG AND DIGITAL MODULATION OF 1.51-MU-M WAVELENGTH, 3-CHANNEL BURIED CRESCENT INGAASP LASERS [J].

EISENSTEIN, G ;

KOREN, U ;

TUCKER, RS ;

KASPER, BL ;

GNAUCK, AH ;

TIEN, PK .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :311-313

[2]

ITAYA Y, 1987, ELECTRON LETT, V23, P194

[3]

KOREN U, 1986, 10TH IEEE INT SEM LA, P186

[4]

KRAKOWSKI M, 1985, INT OPTICS OPTICAL C, V3, P81

[5] GAINASP-INP DH LASER ON SEMI-INSULATING INP SUBSTRATE WITH TERRACE STRUCTURE [J].

MATSUOKA, T ;

SUZUKI, Y ;

NOGUCHI, Y ;

NAGAI, H .

ELECTRONICS LETTERS, 1982, 18 (09) :359-361

[6] PLANAR BURIED HETEROSTRUCTURE INP GAINAS LASERS GROWN ENTIRELY BY OMVPE [J].

MILLER, BI ;

KOREN, U ;

CAPIK, RJ .

ELECTRONICS LETTERS, 1986, 22 (18) :947-949

[7] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MILLER, BI ;

SCHUBERT, EF ;

KOREN, U ;

OURMAZD, A ;

DAYEM, AH ;

CAPIK, RJ .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386

[8]

NELSON AW, 1985, ELECTRON LETT, V21, P889

[9] ENTIRELY VPE-GROWN 1.5-MU-M DFB LASERS WITH LOW THRESHOLD CURRENTS [J].

NISHIBE, T ;

FUNAMIZU, M ;

OKUDA, H ;

FURUYAMA, H ;

HIRAYAMA, Y ;

NAKAMURA, M ;

IWAMOTO, M .

ELECTRONICS LETTERS, 1987, 23 (01) :34-35

[10]

NISHIBE T, 1986, 11TH P IEEE LD C KAN, P98

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