GAINASP-INP DH LASER ON SEMI-INSULATING INP SUBSTRATE WITH TERRACE STRUCTURE

被引：6

作者：

MATSUOKA, T

SUZUKI, Y

NOGUCHI, Y

NAGAI, H

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 09期

关键词：

D O I：

10.1049/el:19820246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：359 / 361

页数：3

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[1] A NEW GAINASP-INP T-LASER AT 1.2 MU-M FABRICATED ON SEMI-INSULATING SUBSTRATE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :L775-L776

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[3] 1.5 MU-M REGION INP-GAINASP BURIED HETEROSTRUCTURE LASERS ON SEMI-INSULATING SUBSTRATES [J].

MATSUOKA, T ;

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NOGUCHI, Y ;

NAGAI, H .

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[4] LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER [J].

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KAWAGUCHI, H .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :309-310

[5] GROOVE GAINASP LASER ON SEMI-INSULATING INP [J].

YU, KL ;

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CHEN, TR ;

CHEN, PC ;

YARIV, A .

ELECTRONICS LETTERS, 1981, 17 (21) :790-792