A NEW GAINASP-INP T-LASER AT 1.2 MU-M FABRICATED ON SEMI-INSULATING SUBSTRATE

被引：2

作者：

CHEN, PC

YU, KL

MARGALIT, S

YARIV, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 12期

关键词：

D O I：

10.1143/JJAP.19.L775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L775 / L776

页数：2

相关论文

共 8 条

[1] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M [J].

ARAI, S ;

ITAYA, Y ;

SUEMATSU, Y ;

KISHINO, K ;

KATAYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :2067-2068

[2] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[3] GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR FIBER OPTIC COMMUNICATIONS [J].

HSIEH, JJ ;

SHEN, CC .

FIBER AND INTEGRATED OPTICS, 1978, 1 (04) :357-368

[4] INTEGRATION OF AN INJECTION-LASER WITH A GUNN OSCILLATOR ON A SEMI-INSULATING GAAS SUBSTRATE [J].

LEE, CP ;

MARGALIT, S ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :806-807

[5] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[6] MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

URY, I ;

MARGALIT, S ;

YUST, M ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1979, 34 (07) :430-431

[7] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].

YAMAMOTO, T ;

SAKAI, K ;

AKIBA, S ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :95-98

[8] MONOLITHICALLY INTEGRATED OPTICAL REPEATER [J].

YUST, M ;

BARCHAIM, N ;

IZADPANAH, SH ;

MARGALIT, S ;

URY, I ;

WILT, D ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :795-797