VERY LOW-THRESHOLD 1.53-MUM DFB LASERS BY VPE TRANSPORT

被引：4

作者：

BROBERG, B

NILSSON, S

TANBUNEK, T

机构：

[1] Inst of Microwave Technology, Stockholm, Swed, Inst of Microwave Technology, Stockholm, Swed

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 12期

关键词：

D O I：

10.1049/el:19870447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

DFB lasers with cw threshold currents as low as 8ma at room temperature have been fabricated using the VPE transport process. The low threshold currents are attributed to narrow active stripes and to the high coupling strength of the grating. Single-mode lasing at 1. 53 mu m up to I equals 8I//t//h and during high-speed direct modulation has been confirmed.

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页码：624 / 625

页数：2

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