3-LAYER AND 4-LAYER LPE INGAAS(P) MUSHROOM STRIPE LASERS FOR LAMBDA = 130, 154, AND 166-MUM

被引：21

作者：

BURKHARD, H

KUPHAL, E

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：650 / 657

页数：8

共 13 条

[1] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923

[2] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].

BURKHARD, H ;

DINGES, HW ;

KUPHAL, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :655-662

[3] EFFECTIVE PHASE AND GROUP INDEXES FOR IN1-XGAXP1-YASY/INP WAVEGUIDE STRUCTURES [J].

BURKHARD, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :503-508

[4] INGAASP-INP MUSHROOM STRIPE LASERS WITH LOW CW THRESHOLD AND HIGH OUTPUT POWER [J].

BURKHARD, H ;

KUPHAL, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L721-L723

[5] MODELS OF THE STATIC AND DYNAMIC BEHAVIOR OF STRIPE GEOMETRY LASERS [J].

BUUS, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :953-960

[6] N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY [J].

GROVES, SH ;

PLONKO, MC .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1003-1004

[7] MBE-GROWN INGAAS/INP BH LASERS WITH LPE BURYING LAYERS [J].

KAWAMURA, Y ;

NOGUCHI, Y ;

ASAHI, H ;

NAGAI, H .

ELECTRONICS LETTERS, 1982, 18 (02) :91-92

[8] PHASE-DIAGRAMS OF INGAASP, INGAAS AND INP LATTICE-MATCHED TO (100)INP [J].

KUPHAL, E .

JOURNAL OF CRYSTAL GROWTH, 1984, 67 (03) :441-457

[9]

KUPHAL E, UNPUB

[10] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J].

LIAU, ZL ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :568-570

← 1 2 →