N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY

被引：18

作者：

GROVES, SH

PLONKO, MC

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1003 / 1004

页数：2

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[1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH
ANTYPAS, GA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 64 - 65
[2] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
SMITH, FGH
WILLIAMS, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757
[3] SOLUBILITIES OF INP AND CDS IN CD, SN, IN, BI AND PB
BUEHLER, E
BACHMANN, KJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 35 (01) : 60 - 64
[4] INTERFACE GRADING IN INGAASP LIQUID-PHASE EPITAXIAL HETEROSTRUCTURES
COOK, LW
FENG, M
TASHIMA, MM
BLATTNER, RJ
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 173 - 175
[5] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS
DIADIUK, V
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 807 - 810
[6] HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M
HSIEH, JJ
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 25 - 27
[7] HSIEH JJ, 1976, I PHYS C SER B, V33, P74
[8] PHASE-DIAGRAMS OF COMPOUND SEMICONDUCTORS .4. SOLUBILITIES OF AIIIBV - COMPOUNDS IN METALS
LEONHARD.A
KUHN, G
[J]. JOURNAL OF THE LESS-COMMON METALS, 1974, 37 (02): : 310 - 312
[9] LATTICE SUPERDILATION PHENOMENA IN DOPED GAAS
MULLIN, JB
STRAUGHAN, BW
DRISCOLL, CMH
WILLOUGHBY, AFW
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2584 - 2587
[10] QUILLEC M, UNPUBLISHED