LATTICE SUPERDILATION PHENOMENA IN DOPED GAAS

被引：62

作者：

MULLIN, JB

STRAUGHAN, BW

DRISCOLL, CMH

WILLOUGHBY, AFW

机构：

[1] ROY RADAR ESTAB,MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

[2] UNIV SOUTHAMPTON,ENGN MAT LABS,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.322977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2584 / 2587

页数：4

相关论文

共 19 条

[1] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS
ABRAHAMS, MS
BLANC, J
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287
[2] Baker TW, 1968, ADVANCES XRAY ANALYS, V11, P359
[3] PRECISION LATTICE CONSTANT DETERMINATION
BOND, WL
[J]. ACTA CRYSTALLOGRAPHICA, 1960, 13 (10): : 814 - 818
[4] DRISCOLL CMH, 1972, RADIATION DAMAGE DEF, P377
[5] DRISCOLL CMH, 1974, 5TH P INT S GALL ARS, P275
[6] NATURE OF INCLUSIONS IN HEAVILY TELLURIUM-DOPED GALLIUM-ARSENIDE
HUTCHINSON, PW
BASTOW, BD
[J]. JOURNAL OF MATERIALS SCIENCE, 1974, 9 (09) : 1483 - 1492
[7] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE
HUTCHINSON, PW
DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01) : 65 - 73
[8] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4584 - &
[9] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1983 - &
[10] OPTICAL PROPERTIES OF N-TYPE GAAS .3. RELATIVE BAND-EDGE RECOMBINATION EFFICIENCY OF SI- AND TE-DOPED CRYSTALS BEFORE AND AFTER HEAT TREATMENT
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4591 - &