EVIDENCE OF GAIN ENHANCEMENT IN LONG WAVELENGTH STRAINED QUANTUM-WELL LASER-DIODES

被引：12

作者：

OSINSKI, JS

GRODZINSKI, P

ZOU, Y

DAPKUS, PD

机构：

[1] Center for Photonic Technology, Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 05期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold current behaviour of InGaAs/InP quantum well laser diodes grown by atmospheric pressure MOCVD is measured and used as a means for determining characteristic modal gain constants. Structures incorporating 1.1% strain in the multiquantum well active region exhibit a threshold current density of 506 A/cm2 at a cavity length of 1498-mu-m, and are described by a characteristic modal gain constant that is 70% higher than in a similar device with 0.2% strain.

引用

页码：469 / 470

页数：2

共 12 条

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