CAVITY LENGTH DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM WELL LASERS

被引：20

作者：

SHIEH, C ^{[1
]}

ENGELMANN, R ^{[1
]}

MANTZ, J ^{[1
]}

ALAVI, K ^{[1
]}

SHU, C ^{[1
]}

机构：

[1] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.100766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1089 / 1091

页数：3

共 9 条

[1] NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS [J].

AMANN, MC .

ELECTRONICS LETTERS, 1979, 15 (14) :441-442

[2]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[3]

KOLBAS RL, 1979, THESIS U ILLINOIS UR

[4] DIRECT EXPERIMENTAL-OBSERVATION OF TWO-DIMENSIONAL SHRINKAGE OF THE EXCITON WAVE-FUNCTION IN QUANTUM WELLS [J].

MASUMOTO, Y ;

MATSUURA, M ;

TARUCHA, S ;

OKAMOTO, H .

PHYSICAL REVIEW B, 1985, 32 (06) :4275-4278

[5] CAVITY LENGTH DEPENDENCE OF THE THRESHOLD BEHAVIOR IN THIN QUANTUM-WELL SEMICONDUCTOR-LASERS [J].

REISINGER, AR ;

ZORY, PS ;

WATERS, RG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :993-999

[6]

SERMAGE B, 1988, I PHYS C SER, V91, P605

[7]

WILCOX JZ, 1988, ELECTRON LETT, V24, P1219

[8] ANISOTROPY AND BROADENING OF OPTICAL GAIN IN A GAAS/ALGAAS MULTIQUANTUM-WELL LASER [J].

YAMADA, M ;

OGITA, S ;

YAMAGISHI, M ;

TABATA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :640-645

[9] ANOMALOUS LENGTH DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS [J].

ZORY, PS ;

REISINGER, AR ;

MAWST, LJ ;

COSTRINI, G ;

ZMUDZINSKI, CA ;

EMANUEL, MA ;

GIVENS, ME ;

COLEMAN, JJ .

ELECTRONICS LETTERS, 1986, 22 (09) :475-477

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