NEW STRIPE-GEOMETRY LASER WITH SIMPLIFIED FABRICATION PROCESS

被引:39
作者
AMANN, MC
机构
[1] Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universität München, Arcisstraße 21
关键词
Semiconductor junction lasers;
D O I
10.1049/el:19790316
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new type of GaAs-GaAlAs stripe-geometry laser with an appreciably simplified fabrication process is described. Owing to the excellent lateral current confinement of this structure, low threshold current densities are achieved even for very narrow stripe widths. In addition, the built-in passive wave- guiding stabilises the fundamental horizontal transverse mode, thereby avoiding nonlinearities in the light output against current characteristic. For 3 µm wide and 175 µm long lasers, threshold currents of 30–35 mA are achieved and stable transverse and longitudinal monomode emission has been observed up to more than 5 mW light power output. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:441 / 442
页数:2
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