Vertical and smooth etching of InP by Cl2/Xe inductively coupled plasma

被引：46

作者：

Matsutani, A

Ohtsuki, H

Koyama, F

Iga, K

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Samco Int Inc, Shinagawa Ku, Tokyo 1410031, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 7A期

关键词：

dry etching; inductively coupled plasma (ICP); InP; Cl-2/Xe;

D O I：

10.1143/JJAP.38.4260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated anisotropic and smooth etching of InP by an inductively coupled plasma (ICP) using Cl-2/Xe at high substrate temperatures. We investigated the etching characteristics by varying the substrate temperature, gas pressure, Cl-2 flow rate and rf power. Vertical and smooth dry etching of InP was achieved under a row dc bias of -80 V. The ICP etching process is an effective low-damage dry-etching technique for microfabrication of InP-based optoelectronic devices.

引用

页码：4260 / 4261

页数：2

共 7 条

[1] Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4 [J].

Etrillard, J ;

Ossart, P ;

Patriarche, G ;

Juhel, M ;

Bresse, JF ;

Daguet, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :626-632

[2] Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H-2/O-2 gas mixture [J].

Etrillard, J ;

Heliot, F ;

Ossart, P ;

Juhel, M ;

Patriarche, G ;

Carcenac, P ;

Vieu, C ;

Puech, M ;

Maquin, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :1056-1061

[3] Fabrication of two-dimensional InP photonic band-gap crystals by reactive ion etching with inductively coupled plasma [J].

Fujiwara, Y ;

Kikuchi, K ;

Hashimoto, M ;

Hatate, H ;

Imai, T ;

Takeda, Y ;

Nakano, H ;

Honda, M ;

Tatsuta, T ;

Tsuji, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (12B) :7763-7768

[4] Low bias voltage dry etching of InP by inductively coupled plasma using SiCl4/Ar [J].

Matsutani, A ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12A) :6655-6656

[5] High-density plasma etching of compound semiconductors [J].

Shul, RJ ;

McClellan, GB ;

Briggs, RD ;

Rieger, DJ ;

Pearton, SJ ;

Abernathy, CR ;

Lee, JW ;

Constantine, C ;

Barratt, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :633-637

[6] CHLORINE-BASED SMOOTH REACTIVE ION-BEAM ETCHING OF INDIUM-CONTAINING III-V COMPOUND SEMICONDUCTOR [J].

YOSHIKAWA, T ;

KOHMOTO, S ;

ANAN, M ;

HAMAO, N ;

BABA, M ;

TAKADO, N ;

SUGIMOTO, Y ;

SUGIMOTO, M ;

ASAKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4381-4386

[7] CHARACTERIZATION OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF INP [J].

YOUTSEY, C ;

GRUNDBACHER, R ;

PANEPUCCI, R ;

ADESIDA, I ;

CANEAU, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3317-3321

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