Epitaxial growth and magnetic properties of EuO on (001)Si by molecular-beam epitaxy

被引：73

作者：

Lettieri, J ^{[1
]}

Vaithyanathan, V

Eah, SK

Stephens, J

Sih, V

Awschalom, DD

Levy, J

Schlom, DG

机构：

[1] Univ Pittsburgh, Ctr Oxide Semicond Mat Quantum Computat, Pittsburgh, PA 15260 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16803 USA

[3] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[4] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[5] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.1593832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial (001) EuO thin films have been grown on (001) Si utilizing an intermediate, epitaxial SrO buffer layer by molecular-beam epitaxy. Four-circle x-ray diffraction reveals nearly phase-pure samples. Magnetic measurements indicate that the EuO layer is ferromagnetic, with a transition temperature (68 K) close to the bulk value and a saturation magnetic moment of 4.7 Bohr magnetons per Eu atom. The magneto-optic Kerr effect observed is also comparable to bulk EuO. Such heterostructures have potential as a means to inject spin-polarized electrons into silicon for use in spintronics applications. (C) 2003 American Institute of Physics.

引用

页码：975 / 977

页数：3

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