Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer

被引：18

作者：

Gleim, T ^{[1
]}

Heske, C

Umbach, E

Schumacher, C

Faschinger, W

Ammon, C

Probst, M

Steinrück, HP

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 13期

关键词：

D O I：

10.1063/1.1358366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the heterovalent system ZnSe/GaAs(100), we have investigated the influence of a Te pretreatment of the substrate on the electronic structure of the interface by photoelectron spectroscopy. We have paid special attention to correctly determine the valence band maximum in a k-resolved fashion, including the use of photon energies which enable excitation at the Gamma point. We find that the Te pretreatment leads to a decrease of the valence band discontinuity as large as 0.3 eV. From photoemission depth profiling we conclude that some Te atoms remain localized at the interface, thus causing the change of the valence band offset while others float on the ZnSe surface, probably acting as surfactants. (C) 2001 American Institute of Physics.

引用

页码：1867 / 1869

页数：3

共 19 条

[1] Optical properties and defect characterization of ZnSe laser diodes grown on tellurium-terminated GaAs [J].