STRUCTURAL QUALITY AND THE GROWTH MODE IN EPITAXIAL ZNSE/GAAS(100)

被引:88
作者
GUHA, S
MUNEKATA, H
CHANG, LL
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1063/1.354079
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the effect of the initial growth mode on the structural quality and dislocation configuration in epitaxial ZnSe/GaAs(100). We find that a three-dimensional initial growth mode strongly degrades the crystal quality and results in a high density of threading dislocations and short misfit dislocation segments. On the other hand a two-dimensional growth mode, achieved by a Zn exposure treatment of GaAs surfaces, results in few threading dislocations and long misfit dislocations. These differences are explained by postulation of new dislocation generation sites created by island coalescence.
引用
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页码:2294 / 2300
页数:7
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