Interaction of vacancies with interstitial oxygen in silicon

被引：32

作者：

Casali, RA ^{[1
]}

Rücker, H ^{[1
]}

Methfessel, M ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 07期

关键词：

D O I：

10.1063/1.1347014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on first-principle total-energy calculations, we show that the majority of vacancies are trapped by interstitial oxygen in silicon wafers with a typical oxygen concentration of about 10(18) cm(-3). Vacancies and interstitial oxygen form so called A centers with a binding energy of 1.7 +/-0.4 eV. As a consequence, the density of bound vacancies exceeds the equilibrium density of free vacancies by several orders of magnitude and effective vacancy diffusion coefficients in Si are reduced in comparison to the diffusion coefficient of free vacancies. However, we find that trapping of vacancies alone cannot account for the large discrepancies between previously reported diffusion coefficients for vacancies. (C) 2001 American Institute of Physics.

引用

页码：913 / 915

页数：3

共 18 条

[11] SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS [J].