An advanced PWM-switch model including semiconductor device nonlinearities

被引:37
作者
Ammous, A [1 ]
Ammous, K [1 ]
Ayedi, M [1 ]
Ounajjar, Y [1 ]
Sellami, F [1 ]
机构
[1] LETI, PEG, W-3038 Sfax, Tunisia
关键词
averaged model; electrothermal simulations; nonlinear effects; PWM-switch;
D O I
10.1109/TPEL.2003.816195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
Contrary to the classical ideal averaged models, the introduced averaged model includes the nonlinear effects of the power semiconductor devices. The proposed nonideal pulse width modulated (PWM)-switch model is a useful method for modeling pulse width modulated converters operating in the continuous conduction mode. The main advantages of the proposed averaged model are that it takes into account of the nonlinear effects of power devices and make it possible to estimate the dissipated power in the different circuit devices. The proposed model can be applied to bi-directional converters and allows the electrothermal simulations of the power electronic system. A simple technique to evaluate the different static and dynamic parameters of the devices, from manufacturers data sheets or experimentally, is presented.
引用
收藏
页码:1230 / 1237
页数:8
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