Auger investigations of thin SiC films

被引：5

作者：

Ecke, G ^{[1
]}

Rossler, H ^{[1
]}

Cimalla, V ^{[1
]}

Pezoldt, J ^{[1
]}

Stauden, T ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Inst Festkorperelektron, D-98684 Ilmenau, Germany

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1998年 / 361卷 / 6-7期

关键词：

D O I：

10.1007/s002160050949

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Problems of the evaluation of Auger depth profiles of thin SiC layers are caused by a number of effects. These are coverage with an adsorbate layer, preferential sputtering, the change of the peak shapes by chemical bonding states and the broadening of the interfaces by atomic mixing, Auger electron escape depth and original surface, interface and sputtering induced roughness. These effects are investigated and their contribution to the degradation of the depth profile is considered. Atomic mixing simulations including electron escape depth correction are able to reproduce the Auger depth profiles. In special cases the simulation must be convoluted with a resolution function caused by roughness. Thus quantitative conclusions about the layer structure, film composition, impurity distribution etc. are possible.

引用

页码：564 / 568

页数：5

共 23 条

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