Grain size effect in sputtered tungsten trioxide thin films on the sensitivity to ozone

被引:48
作者
Gillet, M [1 ]
Aguir, K [1 ]
Bendahan, M [1 ]
Mennini, P [1 ]
机构
[1] Univ Aix Marseille, L2MP, CNRS UMR 6137, Fac Sci & Tech St Jerome, F-13397 Marseille, France
关键词
tungsten oxide; sensors; conductivity; Atomic Force Microscopy;
D O I
10.1016/j.tsf.2005.02.035
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tungsten trioxide thin films have been deposited by reactive RF magnetron sputtering on SiO2/Si substrates with different oxygen partial pressure in the Ar-O-2 gas mixture. After deposition, the oxide films were annealed in air at 400 degrees C during 1 h. The morphology and the structure were investigated by Atomic Force Microscopy and Transmission Electron Microscopy. The morphology and the porosity of postgrowth annealed films are greatly affected by the oxygen pressure during deposition: the higher the oxygen pressure is, the lower the grain size is. Films with small grains have large roughness and porosity compared to the films with large grains. To investigate the WO3 films sensitivity to ozone, the electrical conductance was measured at various ozone concentration in the range from 0.03 to 0.8 ppm. The sensitivity of WO3 films to ozone depends on grain size and porosity: the sensitivity drastically decreases when the grain size increases. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:358 / 363
页数:6
相关论文
共 29 条
[1]  
AGUIR K, 2002, SENSOR ACTUAT B-CHEM, V4208, P1
[2]   TUNGSTEN OXIDE-BASED SEMICONDUCTOR SENSOR HIGHLY SENSITIVE TO NO AND NO2 [J].
AKIYAMA, M ;
TAMAKI, J ;
MIURA, N ;
YAMAZOE, N .
CHEMISTRY LETTERS, 1991, (09) :1611-1614
[3]   Phase transformations inWO3 thin films during annealing [J].
Al Mohammad, A ;
Gillet, M .
THIN SOLID FILMS, 2002, 408 (1-2) :302-309
[4]   Effects of oxygen partial pressure and annealing temperature on the formation of sputtered tungsten oxide films [J].
Bittencourt, C ;
Landers, R ;
Llobet, E ;
Molas, G ;
Correig, X ;
Silva, MAP ;
Sueiras, JE ;
Calderer, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (03) :H81-H86
[5]  
COTTON FA, 1988, ADV ORG CHEM, P829
[6]   The structure and electrical conductivity of vacuum-annealed WO3 thin films [J].
Gillet, M ;
Aguir, K ;
Lemire, C ;
Gillet, E ;
Schierbaum, K .
THIN SOLID FILMS, 2004, 467 (1-2) :239-246
[7]   The role of surface oxygen vacancies upon WO3 conductivity [J].
Gillet, M ;
Lemire, C ;
Gillet, E ;
Aguir, K .
SURFACE SCIENCE, 2003, 532 :519-525
[8]   Microstructural analysis of WO3 thin films on alumina substrates [J].
Gillet, M ;
Al-Mohammad, A ;
Lemire, C .
THIN SOLID FILMS, 2002, 410 (1-2) :194-199
[9]   STATISTICAL-MODEL FOR COALESCENCE OF ISLANDS IN DISCONTINUOUS FILMS [J].
GRANQVIST, CG ;
BUHRMAN, RA .
APPLIED PHYSICS LETTERS, 1975, 27 (12) :693-694
[10]   Application of nano-crystalline porous tin oxide thin film for CO sensing [J].
Jin, ZH ;
Zhou, HJ ;
Jin, ZL ;
Savinell, RF ;
Liu, CC .
SENSORS AND ACTUATORS B-CHEMICAL, 1998, 52 (1-2) :188-194