Resistive memory switching of CuxO films for a nonvolatile memory application

被引：52

作者：

Lv, H. B. ^{[1
]}

Yin, M. ^{[1
]}

Fu, X. F. ^{[1
]}

Song, Y. L. ^{[1
]}

Tang, L. ^{[1
]}

Zhou, P. ^{[1
]}

Zhao, C. H. ^{[1
]}

Tang, T. A. ^{[1
]}

Chen, B. A. ^{[1
]}

Lin, Y. Y. ^{[1
]}

机构：

[1] Fudan Univ, ASIC & Syst State Key Lab, Dept Microelect, Shanghai 200433, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 04期

基金：

中国国家自然科学基金;

关键词：

CuxO; on/off ratio; plasma oxidation; resistive switching; retention test;

D O I：

10.1109/LED.2008.917109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polyerystalline CuxO films produced by plasma oxidation are investigated for nonvolatile memory applications. Reversible bistable resistive switching from a high-resistance state to a low-resistance state, and vice versa, is observed in an integrated Al/CuxO/Cu structure under voltage sweeping. More than 3000 repetitive cycles are observed in 180-mu m memory devices with an on/off ratio of ten times. Data testing shows that the devices meet the ten-year retention requirement for the storage of programmed logic signals.

引用

页码：309 / 311

页数：3

共 11 条

[1] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS [J].

ADLER, D ;

SHUR, MS ;

SILVER, M ;

OVSHINSKY, SR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3289-3309

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] MODEL FOR RESISTIVE-CONDUCTIVE TRANSITION IN REVERSIBLE RESISTANCE-SWITCHING SOLIDS [J].

COOK, EL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :551-&

[4] Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic-layer-deposited HfO2 films -: art. no. 0729030 [J].

Jeong, DS ;

Park, HB ;

Hwang, CS .

APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3

[5] Direct measurement of nucleoside monophosphate delivery from a phosphoramidate pronucleotide by stable isotope labeling and LC-ESI--MS/MS [J].

Kim, Jisook ;

Chou, Tsui-fen ;

Griesgraber, George W. ;

Wagner, Carston R. .

MOLECULAR PHARMACEUTICS, 2004, 1 (02) :102-111

[6] Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition [J].

Oyamada, T ;

Tanaka, H ;

Matsushige, K ;

Sasabe, H ;

Adachi, C .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1252-1254

[7] Reliability study of phase-change nonvolatile memories [J].

Pirovano, A ;

Redaelli, A ;

Pellizzer, F ;

Ottogalli, F ;

Tosi, M ;

Ielmini, D ;

Lacaita, AL ;

Bez, R .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (03) :422-427

[8] THE ROLE OF SPACE-CHARGE-LIMITED-CURRENT CONDUCTION IN EVALUATION OF THE ELECTRICAL-PROPERTIES OF THIN CU2O FILMS [J].

RAKHSHANI, AE .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2365-2369

[9] Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface [J].

Sawa, A ;

Fujii, T ;

Kawasaki, M ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4073-4075

[10] Reproducible resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Jeoung, EJ ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Hwang, IR ;

Kim, SH ;

Byun, IS ;

Kim, JS ;

Choi, JS ;

Park, BH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5655-5657

← 1 2 →