Raman imaging of doping domains in graphene on SiO2

被引：199

作者：

Stampfer, C. ^{[1
]}

Molitor, F. ^{[1
]}

Graf, D. ^{[1
]}

Ensslin, K. ^{[1
]}

Jungen, A. ^{[2
]}

Hierold, C. ^{[2
]}

Wirtz, L. ^{[3
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Swiss Fed Inst Technol, Micro & Nanosyst, CH-8092 Zurich, Switzerland

[3] Dept ISEN, Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-60069 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 24期

关键词：

D O I：

10.1063/1.2816262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line-the most significant Raman peak to identify single-layer graphene-as a function of charging up to vertical bar n vertical bar approximate to 4x10(12) cm(-2). Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the linewidth of the 2D line is, in contrast to the G line, doping independent making this quantity a reliable measure for identifying single-layer graphene. (C) 2007 American Institute of Physics.

引用

页数：3

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