Polyfluorene-based light-emitting diodes with an azide photocross-linked poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) hole-injecting layer

被引：47

作者：

Winroth, Gustaf ^{[1
]}

Latini, Gianluca ^{[1
]}

Credgington, Dan ^{[1
]}

Wong, Loke-Yuen ^{[2
]}

Chua, Lay-Lay ^{[2
]}

Ho, Peter K. -H. ^{[2
]}

Cacialli, Franco ^{[1
]}

机构：

[1] UCL, Dept Phys & Astron, London WC1E 6BT, England

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2892685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used a water-soluble bis(fluorinated phenyl azide) to cross-link a poly(ethylene dioxythiophene):poly(styrene sulphonic acid) (PEDOT:PSS), hole-injection layer, with a view to its future use with water-soluble emitters. To enable direct comparison with conventional PEDOT:PSS, we studied the cross-linked films in diodes incorporating the organic-solvent soluble polymer poly(9,9(')-dioctylfluorene-alt-benzothiadiazole). Kelvin probe characterization of the PEDOT:PSS and electroabsorption measurements of the devices consistently show a 0.2 eV increase of the PEDOT:PSS work function upon cross-linking. We also observe a 70-fold reduction in resistivity, an increase of the current above threshold and a decrease of the "leakage" current below threshold. (c) 2008 American Institute of Physics.

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页数：3

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