Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O3/LaNiO3 thin films on single crystal and platinized-Si substrates

被引：28

作者：

Cho, CR

Francis, LF

Polla, DL

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Microtechnol Lab, Minneapolis, MN 55455 USA

[3] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

MATERIALS LETTERS | 1999年 / 38卷 / 02期

关键词：

ferroelectric; Pb(Zr; Ti)O-3/LaNiO3 thin film; sol-gel; conductive oxide; hysteresis loop; surface states;

D O I：

10.1016/S0167-577X(98)00145-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrically conductive LaNiO3 (LNO) and ferroelectric Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were deposited on single crystal (100)SrTiO3 (STO), (100)LaAlO3 (LAO), and Pt/Ti/SiO2/Si(100) substrates using solution deposition routes. X-ray diffraction and scanning electron microscopy were used to investigate the crystallinity and microstructure of the films. The surface bonding states of the PZT and LNO films were determined by X-ray photoelectron spectroscopy (XPS). The average room-temperature dielectric constant of the PZT films, measured at 1 kHz, was in the range 905-1002 and the dissipation factor was below 0.03 for all films. The remnant polarization and coercive electric field of the PZT/LNO films deposited on (100)STO, (100)LAO, and Pt/Ti/SiO2/Si substrates were 30, 32 and 19 mu/cm(2), and 84, 87 and 57 kV/cm, at applied electric field of 450 kV/cm, respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：125 / 130

页数：6

共 12 条

[1] Hysteresis relaxation in (Pb,La)(Zr,Ti)O-3 thin film capacitors with (La,Sr)CoO3 electrodes [J].