Temperature dependence of SiGe coherent island formation on Si(100): Anomalous reentrant behavior

被引：18

作者：

Deng, X ^{[1
]}

Weil, JD ^{[1
]}

Krishnamurthy, M ^{[1
]}

机构：

[1] Michigan Technol Univ, Dept Met & Mat Engn, Houghton, MI 49931 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.80.4721

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Studies of the temperature dependence (450-800 degrees C) of coherent island formation in SiGe alloys (nominal composition similar to 25% Ge) on Si(100) reveal an anomalous islanding behavior. Three dimensional island formation appears to be suppressed at temperatures below 450 degrees C, and again in a narrow temperature window near similar to 600 degrees C. At all other temperatures, faceted 3D islands are observed. The anomalous effect at intermediate temperatures is qualitatively explained on the basis of a relative reduction in the driving force due to temperature dependent behavior of Ge segregation and interdiffusion.

引用

页码：4721 / 4724

页数：4

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