Optical surface roughness evaluation of phosphorus-doped polysilicon films

被引：3

作者：

Ng, TW

Teo, TW

Rajendra, P

机构：

[1] Natl Univ Singapore, Fac Engn, Singapore 117576, Singapore

[2] Tech Semicond Singapore Pte Ltd, Singapore 738799, Singapore

来源：

OPTICS AND LASERS IN ENGINEERING | 2001年 / 35卷 / 01期

关键词：

Doping (additives) - Light absorption - Light reflection - Phosphorus - Surface roughness;

D O I：

10.1016/S0143-8166(00)00107-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The surface roughness of phosphorus-doped polycrystalline silicon (polysilicon) film is widely believed to be related to its electrical property. In this work, the roughness of polysilicon films prepared in situ under varied processing conditions, is determined using an optical technique that is based on measuring the spectral absorbance of specularly reflected light. The roughness measurements attained are found to follow the logical trend of roughness anticipated from phosphorus-doped polysilicon prepared under controlled variations of temperature, pressure and phospine/silane flow ratio. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1 / 9

页数：9

共 10 条

[1] OPTICAL SURFACE-ROUGHNESS AND SLOPES MEASUREMENTS WITH A DOUBLE BEAM SPECTROPHOTOMETER [J].

ABDULKADIR, A ;

BIRKEBAK, RC .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1974, 45 (11) :1356-1360

[2]

BECKMANN P, 1963, SPIZZICHINO SCATTERI, P170

[3]

CERVA H, 1982, SPRING P PHYS BERL, P35

[4]

CHIANG KL, 1979, J ELECTROCHEM SOC, V119, P108

[5]

CONNELL GAN, 1979, TOP APPL PHYS, P36

[6] THE REFLECTION OF ELECTROMAGNETIC WAVES FROM A ROUGH SURFACE [J].

DAVIES, H .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1954, 101 (07) :209-214

[7]

Harbeke G., 1985, Polycrystalline Semiconductors: Physical Properties and Applications. Proceedings of the International School of Materials Science and Technology, P156

[8] Rugged surface polycrystalline silicon film deposition and its application in a stacked dynamic random access memory capacitor electrode [J].