THE STRUCTURE, MORPHOLOGY AND RESISTIVITY OF IN-SITU PHOSPHORUS-DOPED POLYSILICON FILMS

被引：9

作者：

LESNIKOVA, VP

TURTSEVICH, AS

KRASNITSKY, VY

EMELYANOV, VA

NALIVAIKO, OY

KRAVTSOV, SV

MAKAREVICH, TV

机构：

[1] Research and Development Department, Integral Amalgamation, Minsk, 220064, Kazintsa Square

来源：

THIN SOLID FILMS | 1994年 / 247卷 / 02期

关键词：

D O I：

10.1016/0040-6090(94)90793-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and morphological properties of in situ phosphorus doped polycrystalline silicon films have been investigated using transmission electron microscopy. The effect of deposition parameters (temperature, pressure in a reactor chamber and phosphine-silane flow ratio in the gaseous phase) on the structure, grain size and microroughness of P-doped films have been studied. The peculiarities of recrystallization processes occurring in P-doped films during activating anneal has been investigated. The assumed production condition dependences of the P-doped film growth and recrystallization as well as the correlation between resistivity of the films and their microstructure are discussed on the basis of analysis of the obtained experimental results.

引用

页码：156 / 161

页数：6

共 23 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].