THE LPCVD POLYSILICON PHOSPHORUS DOPED INSITU AS AN INDUSTRIAL-PROCESS

[1] BAUDRANT A, 1980, THEFCIS DRD8021 INT

[2] BROWN WA, 1979, SOLID STATE TECHNOL, V22, P51

[3] OPTICAL EVALUATION OF POLYCRYSTALLINE SILICON SURFACE-ROUGHNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2267 - 2269

[4] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J]. 1600, (119):

[5] DUCHEMIN JP, 1976, THESIS U CAEN FRANCE

[6] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[7] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[8] HAMMOND ML, 1979, SOLID STATE TECHNOL, V22, P61

[9] HERRING RB, 1979, SOLID STATE TECHNOL, V22, P75

[10] INVESTIGATION OF POLYCRYSTALLINE SILICON LAYERS BY ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1111 - &

[1] BAUDRANT A, 1980, THEFCIS DRD8021 INT

[2] BROWN WA, 1979, SOLID STATE TECHNOL, V22, P51

[3] OPTICAL EVALUATION OF POLYCRYSTALLINE SILICON SURFACE-ROUGHNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2267 - 2269

[4] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J]. 1600, (119):

[5] DUCHEMIN JP, 1976, THESIS U CAEN FRANCE

[6] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[7] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[8] HAMMOND ML, 1979, SOLID STATE TECHNOL, V22, P61

[9] HERRING RB, 1979, SOLID STATE TECHNOL, V22, P75

[10] INVESTIGATION OF POLYCRYSTALLINE SILICON LAYERS BY ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1111 - &