Development status of high-efficiency HIT solar cells

被引：379

作者：

Mishima, Takahiro ^{[1
]}

Taguchi, Mikio ^{[1
]}

Sakata, Hitoshi ^{[1
]}

Maruyama, Eiji ^{[1
]}

机构：

[1] Sanyo Elect Co Ltd, Adv Energy Res Ctr, Nishi Ku, Kobe, Hyogo 6512242, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2011年 / 95卷 / 01期

关键词：

High-efficiency solar cell; Crystalline silicon; Heterojunction;

D O I：

10.1016/j.solmat.2010.04.030

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper describes the development status of high-efficiency heterojunction with intrinsic thin-layer (HIT) solar cells at SANYO Electric. Presently, the conversion efficiency of our standard HIT solar cell has reached a level of 23.0% for a practical size of (100.4 cm(2)) substrate. On the other hand, we have developed special technologies for effectively using thinner substrates for HIT solar cells. Surprisingly, we have achieved a quite high open circuit voltage (V(oc)) of 743 mV, and a high conversion efficiency of 22.8% using only a 98-mu m-thick substrate. A 98-mu m-thick cell also exhibits a good temperature coefficient, and allows the thickness of the substrate to be reduced by more than 50% while maintaining its efficiency. These results suggest that the HIT solar cell has the potential to further improve cost-performance. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：18 / 21

页数：4

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