Twenty-two percent efficiency HIT solar cell

被引:259
作者
Tsunomura, Yasufumi [1 ]
Yoshimine, Yukihiro [1 ]
Taguchi, Mikio [1 ]
Baba, Toshiaki [1 ]
Kinoshita, Toshihiro [1 ]
Kanno, Hiroshi [1 ]
Sakata, Hitoshi [1 ]
Maruyama, Eiji [1 ]
Tanaka, Makoto [1 ]
机构
[1] Sanyo Elect Co Ltd, Adv Energy Res Ctr, Nishi Ku, Kobe, Hyogo 6512242, Japan
关键词
High-efficiency solar cells; Heterojunction; Crystalline silicon;
D O I
10.1016/j.solmat.2008.02.037
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We have achieved the world's highest solar cell conversion efficiency of 22.3% (V(oc): 0.725 V, I(sc): 3.909A, FF: 0.791, total area: 100.5 cm(2), confirmed by AIST) by using a heterojunction with intrinsic thin layer (HIT) structure. This is the world's first practical-size (> 100 cm(2)) silicon solar cell that exceeds a conversion efficiency of 22% as a confirmed value. This high efficiency has been achieved mainly due to improvements in a-Si:H/c-Si hetero-interface properties and optical confinement. The excellent a-Si: H/c-Si hetero-interface of the HIT structure enables a high V(oc) of over 0.720V and results in better temperature properties. In order to reduce the power-generating cost, we are now investigating numerous technologies to further improve the conversion efficiency. especially the V(oc), of HIT solar cells. with the aim of achieving 23% efficiency in the laboratory by 2010. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:670 / 673
页数:4
相关论文
共 5 条
[1]  
[Anonymous], P IEEE 4 WORLD C PHO
[2]  
Brendel R., 1994, P 12 EUR PHOT SOL EN, P1339
[3]  
TAGUCHI M, 1990, P 5 PHOT SOL EN C PV, P689
[4]  
TAIRA S, P REN EN 2006, P115
[5]   DEVELOPMENT OF NEW A-SI C-SI HETEROJUNCTION SOLAR-CELLS - ACJ-HIT (ARTIFICIALLY CONSTRUCTED JUNCTION-HETEROJUNCTION WITH INTRINSIC THIN-LAYER) [J].
TANAKA, M ;
TAGUCHI, M ;
MATSUYAMA, T ;
SAWADA, T ;
TSUDA, S ;
NAKANO, S ;
HANAFUSA, H ;
KUWANO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (11) :3518-3522