High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage

被引：20

作者：

Kikkawa, T ^{[1
]}

Nagahara, M ^{[1
]}

Adachi, N ^{[1
]}

Yokokawa, S ^{[1
]}

Kato, S ^{[1
]}

Yokoyama, M ^{[1
]}

Kanamura, M ^{[1
]}

Yamaguchi, Y ^{[1
]}

Hara, N ^{[1
]}

Joshin, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2003年

关键词：

D O I：

10.1109/RFIC.2003.1213918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe high power 70 W CW operation at 52 V drain bias voltage (Vds) using 24-mm gate-periphery AlGaN/GaN HEMTs on SIC substrate. A 48 W output power with the drain efficiency of 60% was also obtained at Vds of 50 V under the efficiency-niatched condition near class-B. At 40 V, the drain efficiency reached 68%. Vds dependence of third order-intermodulation (IM3) was also characterized at Vds up to 50 V. This is the first report about IM3 profile characterization for a large gate-periphery device at Vds of 50 V. We also investigated RF-stress life test at Vds up to 40 V. The AlGaN/GaN HEMT in this study exhibited good reliability over 100 h.

引用

页码：167 / 170

页数：4

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