n-Doping of thermally polymerizable fullerenes as an electron transporting layer for inverted polymer solar cells

被引：58

作者：

Cho, Namchul ^{[1
]}

Yip, Hin-Lap ^{[1
]}

Hau, Steven K. ^{[1
]}

Chen, Kung-Shih ^{[1
]}

Kim, Tae-Wook ^{[1
]}

Davies, Joshua A. ^{[1
]}

Zeigler, David F. ^{[1
]}

Jen, Alex K. -Y. ^{[1
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 19期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

PHOTOVOLTAIC CELLS; PERFORMANCE; EFFICIENT; METHANOFULLERENES; DERIVATIVES; TRANSISTORS; NETWORK; DONOR; FILMS; BAND;

D O I：

10.1039/c1jm10214a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel [6,6]-phenyl-C-61-butyric acid methyl styryl ester (PCBM-S) was synthesized and employed as an electron transporting interfacial layer for bulk heterojunction polymer solar cells with an inverted device configuration. After the deposition of PCBM-S film from solution, the styryl groups of PCBM-S were polymerized by post-thermal treatment to form a robust film which is resistive to common organic solvents. This allows the solution processing of upper bulk heterojunction film without eroding the PCBM-S layer. Additionally, the PCBM-S was n-doped with decamethylcobaltocene (DMC) to increase the conductivity of the film, which resulted in a significantly improved power conversion efficiency from 1.24% to 2.33%. The improved device performance is due to the decrease of series resistance and improved electron extraction property of the n-doped PCBM-S film.

引用

页码：6956 / 6961

页数：6

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