170GHz transferred-substrate heterojunction bipolar transistor

被引：3

作者：

Bhattacharya, U

Samoska, L

Pullela, R

Guthrie, J

Lee, Q

Agarwal, B

Mensa, D

Rodwell, MJW

机构：

[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 15期

关键词：

heterojunction bipolar transistors; indium phosphide;

D O I：

10.1049/el:19960898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report transferred-substrate HBTs with an f(max) of 170 GHz and f(tau) of 120 GHz. Devices scaled to deep submicrometre dimensions should obtain an f(max) of similar to 500 GHz.

引用

页码：1405 / 1406

页数：2

共 6 条

[1] TRANSFERRED SUBSTRATE SCHOTTKY-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS - FIRST RESULTS AND SCALING LAWS FOR HIGH F(MAX) [J].

BHATTACHARYA, U ;

MONDRY, MJ ;

HURTZ, G ;

TAN, IH ;

PULLELA, R ;

REDDY, M ;

GUTHRIE, J ;

RODWELL, MJW ;

BOWERS, JE .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (08) :357-359

[2]

BHATTACHARYA U, 1996, P 8 INT C IND PHOSPH, P145

[3] HIGH-PERFORMANCE LOW-BASE-COLLECTOR CAPACITANCE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY DEEP ION-IMPLANTATION [J].

HO, MC ;

JOHNSON, RA ;

HO, WJ ;

CHANG, MF ;

ASBECK, PM .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (11) :512-514

[4]

LIN W, 1995, 17 ANN GAAS IC S SAN, P167

[5]

MATINE N, 1996, P 8 INT C IND PHOSPH, P137

[6]

Yamahata S., 1995, 1995 IEEE GAAS IC S, P163

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