TRANSFERRED SUBSTRATE SCHOTTKY-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS - FIRST RESULTS AND SCALING LAWS FOR HIGH F(MAX)

被引：17

作者：

BHATTACHARYA, U

MONDRY, MJ

HURTZ, G

TAN, IH

PULLELA, R

REDDY, M

GUTHRIE, J

RODWELL, MJW

BOWERS, JE

机构：

[1] Department of Electrical and Computer Engineering, University of California

[2] Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 08期

关键词：

D O I：

10.1109/55.400737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unlike normal heterojunction bipolar transistors (HBT's), transferred substrate Schottky-collector HBT's (SCHBT's) exhibit substantial increases in f(max) as the emitter and collector stripes are scaled to deep submicron dimensions, First generation SCHBT's with aligned 1-mu m emitter and collector stripes have been fabricated.

引用

页码：357 / 359

页数：3

共 6 条

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