0.1-MU-M SCHOTTKY-COLLECTOR ALAS/GAAS RESONANT-TUNNELING DIODES

被引：27

作者：

SMITH, RP ^{[1
]}

ALLEN, ST ^{[1
]}

REDDY, M ^{[1
]}

MARTIN, SC ^{[1
]}

LIU, J ^{[1
]}

MULLER, RE ^{[1
]}

RODWELL, MJW ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/55.296221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Schottky-collector resonant tunneling diode (RTD) is an RTD with the normal N+ collector and ohmic contact replaced by a Schottky contact, thereby eliminating the associated parasitic resistance. With submicron Schottky contact dimensions, the remaining components of the parasitic series resistance can be greatly reduced, resulting in an increased maximum frequency of oscillation, f(max). AlAs/GaAs Schottky-collector RTDs were fabricated using 0.1 mum T-gate technology developed for high electron mobility transistors. From their measured dc and microwave parameters, and including the effect of the quantum well lifetime, f(max) = 900 GHz is computed.

引用

页码：295 / 297

页数：3

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